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SIHG80N60EF-GE3

Name: SIHG80N60EF-GE3
Brand: Vishay
SKU: 1060390
Availability: InStock
Rating: 4.85 (5 reviews)

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	SIHG80N60EF-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 600V 80A TO247AC / N-Channel 600 V 80A (Tc) 520W (Tc) Through Hole TO-247AC
Datasheet	SIHG80N60EF-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Vishay Siliconix
Series	EF
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	32mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	400 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	6600 pF @ 100 V
Power Dissipation (Max)	520W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3
Base Product Number	SIHG80
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	25
Win Source Part Number	1060390-SIHG80N60EF-GE3
Ultra Librarian 3D Model	Ultra Librarian SIHG80N60EF-GE3 CAD Model

Alternative Products

Description

The SIHG80N60EF-GE3 is an N-channel MOSFET transistor manufactured by Vishay Siliconix.

Drain to Source Voltage: 600 V
Continuous Drain Current: 80A @ 25°C
Maximum Rds on: 32mOhm @ 40A and 10V
Gate Charge: 400 nC @ 10V
Input Capacitance: 6600 pF @ 100 V

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
3+	$23.0811	$69.2433
6+	$18.9383	$113.6298
9+	$18.3465	$165.1185
12+	$17.7547	$213.0564
15+	$17.1629	$257.4435
20+	$15.3874	$307.7480

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 42 pieces

MOQ: 3 pcs

Order Increment : 1 pcs

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