The SIC967ED-T1-GE3 is a dual N-channel, 20 V, TrenchFET® power MOSFET from Vishay. This MOSFET is designed for optimized performance in synchronous rectification and other high-efficiency power conversion applications. Its low on-resistance and fast switching speed contribute to improved efficiency and reduced power losses.

Applications

• Synchronous rectification in DC-DC converters
• Load switching applications
• Power management in portable devices
• Battery charging circuits
• High-side load switching

Features

• Dual N-Channel MOSFET
• Low on-resistance (RDS(on))
• Fast switching speed
• 20 V drain-source voltage (VDS)
• TrenchFET® Power MOSFET technology
• Halogen-free according to IEC 61249-2-21 definition

Benefits

• High Efficiency: The low RDS(on) minimizes conduction losses, resulting in increased efficiency in power conversion applications.
• Reduced Power Loss: Fast switching speed reduces switching losses, further improving overall efficiency.
• Compact Design: The surface-mount package allows for a compact design, suitable for portable and space-constrained applications.
• Improved Thermal Performance: The TrenchFET® technology enhances thermal performance, allowing for higher power dissipation.
• Environmentally Compliant: Halogen-free construction ensures compliance with environmental regulations.

Additional Details

The SIC967ED-T1-GE3 typically features an RDS(on) of around 14 mΩ at a gate-source voltage (VGS) of 4.5 V and a drain current (ID) of 8.7 A. At VGS of 2.5V, RDS(on) is typically 23 mΩ. The gate threshold voltage (VGS(th)) is typically between 0.4 V and 1 V, making it compatible with a wide range of gate drive voltages. The device operates over a temperature range of -55 °C to +150 °C. It comes in a PowerPAK® SC-70 package. Refer to the datasheet for detailed specifications and application notes.