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SI9181DQ-33-T1

Part No SI9181DQ-33-T1
Manufacturer Vishay
Catalog HOT - SALES and EOL Components (S)
Description Micropower 350-mA CMOS LDO Regulator With Error Flag/Power-On-Reset
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Manufacturer Vishay
Win Source Part Number 323133-SI9181DQ-33-T1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI9181DQ-33-T1 CAD Model

Description

The SI9181DQ-33-T1 is a P-Channel Power MOSFET manufactured by Vishay. This MOSFET is designed for power management and load switching applications requiring high efficiency and compact size. Its low on-resistance and fast switching speed make it suitable for use in portable devices, power supplies, and various other electronic systems.

Applications:

  • Load Switching: Controlling power to various components and circuits in electronic devices.
  • Power Management Circuits: Used in DC-DC converters and voltage regulators for efficient power conversion.
  • Battery Management Systems (BMS): Plays a role in battery charging and discharging control within battery systems.
  • Portable Devices: Ideal for use in smartphones, tablets, and other portable devices due to its small size and high efficiency.
  • LED Lighting: Driving and controlling LEDs in lighting applications.

Features:

  • P-Channel MOSFET: Allows for simpler gate drive circuitry in certain applications.
  • Low On-Resistance (RDS(on)): Minimizes power losses and improves efficiency.
  • Fast Switching Speed: Enables efficient operation in high-frequency switching circuits.
  • Surface Mount Package: Compact package for space-saving designs.
  • TrenchFET® Power MOSFET Technology: Utilizes advanced trench technology for superior performance and efficiency.

Benefits:

  • High Efficiency: Low RDS(on) reduces power dissipation, leading to cooler and more efficient operation.
  • Compact Size: Small surface mount package allows for integration into densely packed circuit boards.
  • Reliable Performance: Designed for stable and consistent performance under various operating conditions.
  • Simplified Design: P-Channel configuration can simplify some power circuit designs.
  • Reduced Heat Generation: Low on-resistance minimizes heat generation, enhancing system reliability.

Technical Specifications: The SI9181DQ-33-T1 typically features a drain-source voltage (VDS) of -33V, a gate-source voltage (VGS) of ±8V, and a continuous drain current (ID) of approximately -3.3A. The on-resistance (RDS(on)) is typically around 0.1 ohms at VGS = -4.5V. The device is available in a PowerPAK® SC-70 package.

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