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Same model may have multiple batches, images only for reference.
SI8487DB-T1-E1 Real Image
Same model may have multiple batches, images only for reference.

SI8487DB-T1-E1

Part No SI8487DB-T1-E1
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET P-CH 30V MICROFOOT
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Maximum) at Id, Vgs 31mOhm at 2A, 10V
Vgs(th) (Maximum) at Id 1.2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 80nC at 10V
Maximum Vgs ±12V
Input Capacitance (Ciss) (Maximum) at Vds 2240pF at 15V
Power Dissipation (Maximum) 1.1W , 2.7W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 4-Microfoot
Manufacturer Package 4-UFBGA
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 803782-SI8487DB-T1-E1
Ultra Librarian 3D Model Ultra Librarian SI8487DB-T1-E1 CAD Model

Description

Vishay Siliconix's SI8487DB-T1-E1 is a P-channel MOSFET that has a drain to source voltage of 30V.

  • Drain to Source Voltage: 30V
  • Maximum Power Dissipation: 1.1W
  • Package: 4-UFBGA
  • Temperature Range: -55°C to 150°C
  • Popularity: Medium
  • Supply/Demand Status: Balanced
  • Manufacturer Pack Quantity: 3,000

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Pricing & Ordering

Quantity Unit Price Ext. Price
130+ $0.3936 $51.1680
310+ $0.3229 $100.0990
480+ $0.3128 $150.1440
665+ $0.3028 $201.3620
855+ $0.2927 $250.2585
1,145+ $0.2624 $300.4480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,060 pieces
MOQ: 130 pcs
Order Increment : 1 pcs
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