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SI6969DQ-T1

Part No SI6969DQ-T1
Manufacturer Vishay
Catalog Hard To Find
Sample
Rohs State Need to verify
ECAD Module
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Reference Date Code 0348+
Reference case TSSOP8
Manufacturer Vishay
Manufacturer Homepage www.vishay.com
RoHS State Request Verification
Win Source Part Number 716203-SI6969DQ-T1
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI6969DQ-T1 CAD Model

Description

The SI6969DQ-T1 is a dual N-channel MOSFET manufactured by Vishay Semiconductors. This device features two MOSFETs in a single PowerPAK® SO-8 package, designed for high-efficiency synchronous rectification and power management applications. With its low on-resistance (RDS(on)) and compact size, the SI6969DQ-T1 offers significant advantages in terms of power efficiency and board space savings.

Applications

  • Synchronous rectification
  • DC-DC converters
  • Power management in portable devices
  • Load switching
  • Adaptor circuits

Features

  • Dual N-channel MOSFETs: Integrates two MOSFETs into a single package.
  • Low on-resistance (RDS(on)): Minimizes conduction losses, improving efficiency.
  • High-speed switching: Reduces switching losses.
  • Logic-level gate drive: Can be driven directly by logic-level signals.
  • PowerPAK® SO-8 package: Provides excellent thermal performance in a compact footprint.

Benefits

  • Improved Energy Efficiency: The low RDS(on) significantly reduces power dissipation, leading to higher energy efficiency.
  • Reduced Board Space: Integrating two MOSFETs into a single package saves valuable board space.
  • Simplified Circuit Design: Logic-level gate drive simplifies the drive circuitry, reducing component count and cost.
  • Enhanced Thermal Performance: The PowerPAK® SO-8 package ensures efficient heat dissipation, improving reliability.
  • Reduced Component Count: Integration of two MOSFETs reduces the number of components needed.

Additional Details

The SI6969DQ-T1 boasts a drain-source voltage (VDS) rating of 30V and a continuous drain current (ID) rating that varies depending on the operating temperature and mounting conditions. It is designed for optimal performance in synchronous rectification circuits, where it efficiently switches current to minimize losses. The gate-source voltage (VGS) is typically rated at ±20V. Its thermal resistance is designed to efficiently dissipate heat, further ensuring stable operation.

This dual MOSFET is suitable for a variety of applications including synchronous buck converters, power inverters, and high-side switching. Its robust design and optimized performance make it a preferred choice for designers seeking to maximize efficiency and reduce board space in their power electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0178 $60.5340
70+ $1.6551 $115.8570
110+ $1.6043 $176.4730
150+ $1.5523 $232.8450
195+ $1.5003 $292.5585
260+ $1.3456 $349.8560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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