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Same model may have multiple batches, images only for reference.
SI5404BDC-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI5404BDC-T1-GE3

Part No SI5404BDC-T1-GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 20V 5.4A 1206-8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Reel
Part Status Obsolete (End Of Life)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) at 25°C 5.4A
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Maximum) at Id, Vgs 28mOhm at 5.4A, 4.5V
Vgs(th) (Maximum) at Id 1.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 11nC at 4.5V
Maximum Vgs ±12V
Power Dissipation (Maximum) 1.3W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 1206-8 ChipFET
Manufacturer Package 8-SMD, Flat Lead
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 810410-SI5404BDC-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI5404BDC-T1-GE3 CAD Model

Description

The Vishay Siliconix SI5404BDC-T1-GE3 is a MOSFET (Metal Oxide) FET Type: N-Channel electronic component.

  • Drain to Source Voltage (Vdss): 20V
  • Power Dissipation (Maximum): 1.3W
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Temperature Range - Operating: -55°C ~ 150°C
  • Package: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET
  • Rds On (Maximum) @ Id, Vgs: 28mOhm @ 5.4A, 4.5V
  • Gate Charge (Qg) (Maximum) @ Vgs: 11nC @ 4.5V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A
  • Vgs(th) (Maximum) @ Id: 1.5V @ 250μA
  • Maximum Vgs: ±12V
  • Status: Obsolete (End Of Life)
  • Supply/Demand: Limited
  • Manufacturer Pack Quantity: 3,000
  • MSL Level: 1 (Unlimited)

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