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Same model may have multiple batches, images only for reference.
IRLI520G Real Image
Same model may have multiple batches, images only for reference.

IRLI520G

Part No IRLI520G
Manufacturer Vishay
Catalog FETs - Single
Description HEXFET-R POWER MOSFET | MOSFET N-CH 100V 7.2A TO220FP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 7.2A
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Maximum) at Id, Vgs 270mOhm at 4.3A, 5V
Gate Source Voltage(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 12nC at 5V
Gate Source Voltage (Maximum) ±10V
Input Capacitance (Ciss) (Maximum) at Vds 490pF at 25V
Power Dissipation (Maximum) 37W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3 Full Pack, Isolated Tab
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1188546-IRLI520G
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRLI520G CAD Model

Description

The Vishay Siliconix 1188546-IRLI520G is an obsolete discrete semiconductor product that is suitable for use in power management applications.

  • Transistor Polarity: N-channel
  • Drain-Source Breakdown Voltage: 100V
  • Package: TO-220-3
  • Mounting Type: Through Hole
  • Power Dissipation: 37W
  • Operating Temperature: -55°C to 175°C
  • Gate-Source Voltage(th): 2V @ 250μA
  • Gate-Source Voltage (Maximum): ±10V

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