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IRFR120TR

Part No IRFR120TR
Manufacturer Vishay
Catalog FETs - Single
Description HEXFET POWER MOSFET | MOSFET N-CH 100V 7.7A DPAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 7.7A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 270mOhm at 4.6A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 16nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 360pF at 25V
Power Dissipation (Maximum) 2.5W, 42W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D-Pak
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 2,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187864-IRFR120TR
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR120TR CAD Model

Description

The Vishay Siliconix IRFR120TR is a high-quality MOSFET transistor that is designed to provide reliable performance in a variety of electronic applications.

  • Transistor Polarity: N-channel
  • Maximum Drain-Source Breakdown Voltage: 100V
  • Power Dissipation: 2.5W and 42W
  • Gate Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2599 $58.4775
475+ $0.2437 $115.7575
740+ $0.2345 $173.5300
1,060+ $0.2183 $231.3980
1,375+ $0.2102 $289.0250
1,725+ $0.2010 $346.7250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,086 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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