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IRL640S

Name: IRL640S
Brand: Vishay
SKU: 605836
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IRL640S
Manufacturer	Vishay
Catalog	FETs - Single
Description	HEXFET-R POWER MOSFET \| MOSFET N-CH 200V 17A D2PAK
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay Siliconix
Packaging	Tube
Status	Obsolete
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	200V
Id - Continuous Drain Current	17A
Drive Voltage (Max Rds On, Min Rds On)	4V, 5V
Rds On (Maximum) at Id, Vgs	180mOhm at 10A, 5V
Gate Source Voltage(th) (Maximum) at Id	2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	66nC at 5V
Gate Source Voltage (Maximum)	±10V
Input Capacitance (Ciss) (Maximum) at Vds	1800pF at 25V
Power Dissipation (Maximum)	3.1W, 125W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	SMD
Supplier Device Package	D2PAK
Manufacturer Package	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity	50
MSL Level	1 (Unlimited)
Win Source Part Number	1188524-IRL640S
Manufacturer Homepage	www.irf.com
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IRL640S CAD Model

Description

The Vishay Siliconix IRL640S is an N-channel MOSFET with a maximum drain-source breakdown voltage of 200V and a continuous drain current of 17A.

Gate charge: 66nC @ 5V
Gate-source voltage (th): 2V @ 250μA
Mounting: SMD D2PAK package
Maximum power dissipation: 3.1W and 125W
Supply and demand status: balanced
Packaging: tube packaging.
Category: discrete semiconductor products

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
9+	$6.5692	$59.1228
22+	$5.3901	$118.5822
34+	$5.2217	$177.5378
46+	$5.0531	$232.4426
60+	$4.8847	$293.0820
80+	$4.3795	$350.3600

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 20,000 pieces

MOQ: 9 pcs

Order Increment : 1 pcs

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