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IRF620S

Part No IRF620S
Manufacturer Vishay
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 200V 5.2A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 5.2A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 800mOhm at 3.1A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 14nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 260pF at 25V
Power Dissipation (Maximum) 3W, 50W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187086-IRF620S
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF620S CAD Model

Description

The Vishay Siliconix IRF620S is an N-channel MOSFET transistor designed for use in high power applications.

  • Maximum Vds: 200V
  • Continuous drain current: 5.2A
  • This device is capable of handling a wide range of power requirements.
  • The device is packaged in a D2PAK package, making it easy to mount onto a PCB.
  • The Vishay Siliconix IRF620S is an obsolete device, but it is still available for purchase.
  • The supply and demand status is sufficient, ensuring that the device is readily available for purchase.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6632 $58.2120
85+ $1.3652 $116.0420
135+ $1.3225 $178.5375
185+ $1.2797 $236.7445
235+ $1.2370 $290.6950
315+ $1.1088 $349.2720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 65,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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