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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 30A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 50mOhm at 18A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 46nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1200pF at 25V
Power Dissipation (Maximum) 88W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1188171-IRFZ34
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRFZ34 CAD Model

Description

The Vishay Siliconix IRFZ34 is an N-channel MOSFET with a drain-source breakdown voltage of 60V and a continuous drain current of 30A.

  • Application: Designed for power management applications and can handle high power levels.
  • Features: Low on-resistance and fast switching times, making it suitable for high frequency applications.
  • Package: Housed in a TO-220AB package, which is a standard package that is easy to mount on a circuit board.
  • Benefits: Reliable and cost-effective solution for power management in various electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.4015 $70.0750
115+ $1.1499 $132.2385
175+ $1.1140 $194.9500
240+ $1.0781 $258.7440
315+ $1.0422 $328.2930
420+ $0.9342 $392.3640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 1,400 pieces
MOQ: 50 pcs
Order Increment : 1 piece
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