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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 41A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 55mOhm at 25A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 140nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2800pF at 25V
Power Dissipation (Maximum) 230W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Win Source Part Number 1187760-IRFP150
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRFP150 CAD Model

Description

The Vishay Siliconix IRFP150 is a high-performance N-channel MOSFET transistor designed for use in power management applications.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 41A
  • On-Resistance: 55mOhm @ 25A and 10V
  • Package: TO-247-3
  • Gate-Source Voltage: ±20V
  • Applications: industrial and power management applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.2376 $59.3264
33+ $3.4770 $114.7410
50+ $3.3684 $168.4200
69+ $3.2598 $224.9262
89+ $3.1511 $280.4479
119+ $2.8251 $336.1869
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 500 pieces
MOQ: 14 pcs
Order Increment : 1 piece
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