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IRFBG20

Part No IRFBG20
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=1000V, Rds(on)=11ohm, Id=1.4A) | MOSFET N-CH 1000V 1.4A TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 1000V
Id - Continuous Drain Current 1.4A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 11Ohm at 840mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 38nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 500pF at 25V
Power Dissipation (Maximum) 54W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187551-IRFBG20
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian IRFBG20 CAD Model

Description

The Vishay IRFBG20 is a high-performance N-channel MOSFET designed for use in industrial power management applications.

  • Drain-Source Breakdown Voltage: 1000V
  • Continuous Drain Current: 1.4A
  • On-Resistance: 11Ohm @ 840mA and 10V
  • Package: TO-220-3
  • Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0095 $60.5700
140+ $0.8281 $115.9340
220+ $0.8027 $176.5940
300+ $0.7762 $232.8600
385+ $0.7508 $289.0580
515+ $0.6734 $346.8010
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 52,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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