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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 900V
Id - Continuous Drain Current 3.6A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 3.7Ohm at 2.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 78nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1200pF at 25V
Power Dissipation (Maximum) 125W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 800
MSL Level 1 (Unlimited)
Win Source Part Number 724067-IRFBF30STRL
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFBF30STRL CAD Model

Description

The IRFBF30STRL is an N-channel MOSFET manufactured by Vishay Siliconix.

  • Drain-Source Breakdown Voltage: 900V
  • Continuous Drain Current: 3.6A
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Input Capacitance: 1200pF @ 25V
  • Gate Charge: 78nC @ 10V
  • Package: D2PAK TO-263-3
  • Mounting: SMD
  • Power Dissipation: 125W
  • Operating Temperature: -55°C to 150°C
  • Supply and Demand Status: Limited

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