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Same model may have multiple batches, images only for reference.
IRFBC40S Real Image
Same model may have multiple batches, images only for reference.

IRFBC40S

Part No IRFBC40S
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A) | MOSFET N-CH 600V 6.2A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 6.2A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.2Ohm at 3.7A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 60nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1300pF at 25V
Power Dissipation (Maximum) 3.1W, 130W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187539-IRFBC40S
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian IRFBC40S CAD Model

Description

The Vishay IRFBC40S is an N-Channel MOSFET that is packaged in a D2PAK case.

  • Vds - Drain-Source Breakdown Voltage: 600V
  • Id - Continuous Drain Current: 6.2A
  • Rds On (Maximum) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
  • Gate source voltage(th) (maximum) @ Id: 4V @ 250μA
  • Gate charge (Qg) (maximum) @ Vgs: 60nC @ 10V
  • Gate source voltage (maximum): ±20V
  • Input capacitance (Ciss) (maximum) @ Vds: 1300pF @ 25V
  • Product Status: Obsolete

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