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Same model may have multiple batches, images only for reference.
IRFL110 Real Image
Same model may have multiple batches, images only for reference.

IRFL110

Part No IRFL110
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A) | MOSFET N-CH 100V 1.5A SOT223
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 1.5A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 540mOhm at 900mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 8.3nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 180pF at 25V
Power Dissipation (Maximum) 2W, 3.1W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package SOT-223
Manufacturer Package TO-261-4, TO-261AA
Manufacturer Pack Quantity 80
MSL Level 1 (Unlimited)
Win Source Part Number 1187719-IRFL110
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFL110 CAD Model

Description

The Vishay Siliconix MOSFET is a N-Channel transistor with a drain-source breakdown voltage of 100V and a continuous drain current of 1.5A.

  • Manufacturer: Vishay Siliconix
  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 1.5A
  • Power Dissipation: 2W, 3.1W
  • Status: Obsolete
  • Temperature Range: -55°C to 150°C
  • Drive Voltage (max Rds on, min Rds on): 10V
  • Gate Source Voltage (th) (Maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 8.3nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 180pF @ 25V
  • Supply and Demand: Balanced
  • Manufacturer Pack Quantity: 80
  • MSL Level: 1 (Unlimited)

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