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IRF9Z20 Real Image1 IRF9Z20 Real Image2
Same model may have multiple batches, images only for reference.
IRF9Z20 Real Image1 IRF9Z20 Real Image2
IRF9Z20 Real Image1 IRF9Z20 Real Image2
Same model may have multiple batches, images only for reference.

IRF9Z20

Part No IRF9Z20
Manufacturer Vishay
Catalog FETs - Single
Description P-CHANNEL 50 VOLT POWER MOSFETs | MOSFET P-CH 50V 9.7A TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 50V
Id - Continuous Drain Current 9.7A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 280mOhm at 5.6A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 26nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 480pF at 25V
Power Dissipation (Maximum) 40W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187470-IRF9Z20
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF9Z20 CAD Model

Description

The Vishay Siliconix IRF9Z20 MOSFET is a P-Channel transistor that can be used in various electronic applications.

  • Vds-Drain-Source Breakdown Voltage: 50V
  • Id-Continuous Drain Current: 9.7A
  • Rds On (Maximum) @ Id, Vgs: 280mOhm @ 5.6A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 480pF @ 25V
  • Operating Temperature Range: -55°C to 150°C
  • Power dissipation (maximum): 40W
  • Supply and demand status: balanced.

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