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IRF630STRR

Name: IRF630STRR
Brand: Vishay
SKU: 604416
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IRF630STRR
Manufacturer	Vishay
Catalog	FETs - Single
Description	Power MOSFET \| MOSFET N-CH 200V 9A D2PAK
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay Siliconix
Packaging	Tape and Reel
Status	Obsolete
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	200V
Id - Continuous Drain Current	9A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	400mOhm at 5.4A, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	43nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	800pF at 25V
Power Dissipation (Maximum)	3W, 74W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	SMD
Supplier Device Package	D2PAK (TO-263)
Manufacturer Package	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity	800
MSL Level	1 (Unlimited)
Win Source Part Number	1187104-IRF630STRR
Manufacturer Homepage	www.vishay.com
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IRF630STRR CAD Model

Alternative Products

Description

The Vishay Siliconix IRF630STRR is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

Drain-Source Breakdown Voltage: 200V
Continuous Drain Current (Id): 9A
Power Dissipation (Max): 3W
Package / Case: D2PAK (TO-263)
Gate-Source Voltage (Vgs): ±20V
Gate-Source Threshold Voltage (Vgs(th)) @ Id: 4V @ 250μA
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Packaging: Tape and Reel
Operating Temperature: -55°C to 150°C

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