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Same model may have multiple batches, images only for reference.
IRF630STRR Real Image
Same model may have multiple batches, images only for reference.

IRF630STRR

Part No IRF630STRR
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET | MOSFET N-CH 200V 9A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 9A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 400mOhm at 5.4A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 43nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 800pF at 25V
Power Dissipation (Maximum) 3W, 74W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK (TO-263)
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 800
MSL Level 1 (Unlimited)
Win Source Part Number 1187104-IRF630STRR
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF630STRR CAD Model

Description

The Vishay Siliconix IRF630STRR is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current (Id): 9A
  • Power Dissipation (Max): 3W
  • Package / Case: D2PAK (TO-263)
  • Gate-Source Voltage (Vgs): ±20V
  • Gate-Source Threshold Voltage (Vgs(th)) @ Id: 4V @ 250μA
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
  • Packaging: Tape and Reel
  • Operating Temperature: -55°C to 150°C

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