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SI2308DS-T1-GE3

Part No SI2308DS-T1-GE3
Manufacturer Vishay
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 189601-SI2308DS-T1-GE3
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI2308DS-T1-GE3 CAD Model

Description

The SI2308DS-T1-GE3 is an N-Channel MOSFET manufactured by Vishay. It is designed for low-voltage, high-speed switching applications requiring high efficiency.

Applications

  • DC-DC Converters
  • Load Switching
  • Power Management in Portable Devices
  • Battery Charging Circuits
  • LED Drivers

Features

  • Low On-Resistance (RDS(on)): Minimizes power loss and heat generation, leading to higher efficiency.
  • Fast Switching Speed: Enables efficient operation in high-frequency circuits.
  • Logic Level Gate Drive: Allows direct control from microcontrollers and other logic devices.
  • TrenchFET® Power MOSFET: Vishay's advanced trench technology for improved performance.
  • Halogen-Free: Environmentally friendly and compliant with RoHS standards.

Benefits

  • Increased Efficiency: Lower RDS(on) minimizes power dissipation, leading to higher efficiency.
  • Extended Battery Life: Reduced power consumption extends battery life in portable devices.
  • Simplified Design: Logic level gate drive simplifies interfacing with control circuitry.
  • Reduced Heat Sink Requirements: Lower power dissipation reduces the need for bulky heat sinks.
  • Environmentally Compliant: Halogen-free construction promotes sustainability.

Additional Details

The SI2308DS-T1-GE3 typically comes in a SOT-23 package. Its drain-source voltage (VDS) is generally rated around 20V, and the continuous drain current (ID) is typically in the range of 5A to 8A, depending on the operating conditions and thermal management. The gate threshold voltage (VGS(th)) is typically between 1V and 3V. The 'GE3' suffix indicates that the device is RoHS compliant and halogen-free. The 'T1' usually indicates tape and reel packaging. This MOSFET is particularly suitable for portable electronic devices, such as smartphones and tablets, where minimizing power consumption and heat generation is crucial. The trenchFET technology contributes to a lower RDS(on) compared to older MOSFET designs, resulting in less heat generation and improved overall performance. Always refer to the Vishay datasheet for comprehensive electrical characteristics, thermal performance data, and application guidelines. Proper thermal management is crucial to ensure the device operates within its safe operating area.

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