IRF630S Real Image
Same model may have multiple batches, images only for reference.

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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 9A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 400mOhm at 5.4A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 43nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 800pF at 25V
Power Dissipation (Maximum) 3W, 74W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK (TO-263)
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187103-IRF630S
Manufacturer Homepage www.nxp.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF630S CAD Model

Description

The Vishay Siliconix IRF630S is an N-channel MOSFET designed for use in discrete semiconductor products.

  • With a Vds - Drain-Source Breakdown Voltage of 200V and a continuous drain current of 9A, this MOSFET is ideal for a variety of applications.
  • The Rds On (Maximum) @ Id, Vgs is 400mOhm @ 5.4A, 10V, and the gate-source voltage(th) (Maximum) @ Id is 4V @ 250μA.
  • The gate charge (Qg) (Maximum) @ Vgs is 43nC @ 10V, and the input capacitance (Ciss) (Maximum) @ Vds is 800pF @ 25V.
  • The IRF630S is available in a D2PAK (TO-263) package and is suitable for use in a range of operating temperatures from -55°C to 150°C.

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3637 $52.0014
52+ $1.9394 $100.8488
80+ $1.8788 $150.3040
110+ $1.8182 $200.0020
143+ $1.7576 $251.3368
191+ $1.5758 $300.9778
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 82 pieces
MOQ: 22 pcs
Order Increment : 1 piece
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