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Same model may have multiple batches, images only for reference.
2N6661 Real Image
Same model may have multiple batches, images only for reference.

2N6661

Part No 2N6661
Manufacturer Vishay
Catalog FETs - Single
Description N-Channel Enhancement-Mode Vertical DMOS FETs | MOSFET N-CH 90V 0.86A TO-205
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 90V
Id - Continuous Drain Current 860mA
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Maximum) at Id, Vgs 4Ohm at 1A, 10V
Gate Source Voltage(th) (Maximum) at Id 2V at 1mA
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 50pF at 25V
Power Dissipation (Maximum) 725mW, 6.25W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-39
Manufacturer Package TO-205AD, TO-39-3 Metal Can
Manufacturer Pack Quantity 100
MSL Level 1 (Unlimited)
Win Source Part Number 1124178-2N6661
Manufacturer Homepage www.supertex.com
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Industrial, Motor Drive & Control
Ultra Librarian 3D Model Ultra Librarian 2N6661 CAD Model

Description

The Vishay Siliconix 2N6661 is an N-channel MOSFET transistor with a TO-39 package and a maximum power dissipation of 725mW. It has a balanced supply and demand status.

  • Package: TO-39
  • Power Dissipation (max): 725mW
  • Vds (drain-source breakdown voltage): 90V
  • Continuous Drain Current: 860mA
  • Rds On (max): 4Ohm @ 1A, 10V
  • Gate Source Voltage(th) (max): 2V @ 1mA
  • Input Capacitance (Ciss): 50pF @ 25V
  • Product Status: obsolete

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Quantity Unit Price Ext. Price
2+ $27.8572 $55.7144
5+ $22.8572 $114.2860
7+ $22.1429 $155.0003
10+ $21.4286 $214.2860
13+ $20.7143 $269.2859
17+ $18.5714 $315.7138
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