The UT2316L-AE3-R is a P-channel enhancement-mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by UTC (Unisonic Technologies Co., Ltd.). It is designed for low voltage applications such as power management in portable devices, load switching, and DC-DC converters.

Applications

• Load Switching
• DC-DC Converters
• Power Management in Portable Devices
• Battery Protection
• Logic Level Conversion

Features

• P-Channel MOSFET
• Low On-Resistance (RDS(on))
• Low Gate Threshold Voltage (VGS(th))
• Fast Switching Speed
• Surface Mount Package
• RoHS Compliant

Benefits

• Efficient power management due to low on-resistance, reducing power loss and heat generation.
• Simplified driving circuitry with low gate threshold voltage.
• Fast switching speeds enable high-frequency operation in power conversion applications.
• Compact surface mount package for space-saving design.
• Suitable for battery-powered applications due to its low voltage operation.

Technical Specifications

The UT2316L-AE3-R features a drain-source voltage (VDS) rating. The on-resistance (RDS(on)) is typically very low at a specified gate-source voltage (VGS). The gate threshold voltage (VGS(th)) is also specified. The device is available in a surface-mount package. Detailed electrical characteristics, including maximum drain current, power dissipation, and thermal resistance, can be found in the manufacturer's datasheet.