The TC58NVG2S3EBAI5 is a 2Gbit (256M x 8 bit) NAND Flash memory device manufactured by Toshiba Semiconductor and Storage. It utilizes a single 3.3V power supply and is designed for mass storage applications. This device employs advanced memory cell technology to achieve high density and reliability.

Applications:

• Solid-state drives (SSDs)
• USB flash drives
• Memory cards (SD, microSD)
• Embedded storage in mobile devices
• Data loggers

Features:

• 2Gbit (256M x 8 bit) capacity: Provides ample storage space for data and applications.
• Single 3.3V power supply: Simplifies system design and reduces power consumption.
• NAND Flash technology: Offers high density, low cost, and non-volatile storage.
• Page size: 2048 bytes + 64 bytes for redundancy
• Block size: 64 pages
• Fast page program and read times: Enables quick data access.
• High endurance: Withstands a large number of program/erase cycles.
• RoHS compliant: Complies with environmental regulations.

Benefits:

• High storage capacity: Provides ample storage for various applications.
• Low power consumption: Extends battery life in portable devices.
• Non-volatile storage: Retains data even when power is turned off.
• Fast data access: Enables quick program loading and data retrieval.
• Reliable performance: Withstands a large number of program/erase cycles.
• Environmentally friendly: Complies with RoHS regulations.

Technical Specifications:

The TC58NVG2S3EBAI5 operates on a 3.3V power supply. The page size is 2048 + 64 bytes, and the block size is 64 pages. The typical page program time is 200 μs, and the typical page read time is 25 μs. The endurance is specified at 100,000 program/erase cycles. The data retention is 10 years. The operating temperature range is from -25°C to +85°C. The package is a TSOP (Thin Small Outline Package), allowing for easy surface mounting. Error correction code (ECC) is used to improve data reliability. The device includes a write protect function to prevent accidental data erasure.