The TC58DVG14B1TG00 is a 16Gbit (2Gx8) NAND Flash memory device manufactured by Toshiba Semiconductor and Storage. This device utilizes a single 3.3V power supply and is designed for mass storage applications requiring high density and reliable data storage.

Applications:

• Solid State Drives (SSDs)
• USB Flash Drives
• Memory Cards (SD, microSD)
• Embedded Systems requiring non-volatile storage
• Mobile Phones and Tablets

Features:

• Capacity: 16Gbit (2Gx8)
• Supply Voltage: 2.7V to 3.6V
• Interface: Standard NAND Flash Interface
• Page Size: 8192 Bytes + 640 Bytes (Spare)
• Block Size: 512 Kbytes
• Operating Temperature: -25°C to 85°C
• Data Retention: 10 years
• Endurance: 100,000 Program/Erase Cycles

Benefits:

• High-density storage in a compact package.
• Fast read and write speeds for improved system performance.
• Low power consumption, extending battery life in portable devices.
• High reliability and data retention, ensuring data integrity.
• Wide operating temperature range, suitable for various environments.
• Enhanced error correction code (ECC) for improved data protection.

Technical Specifications:

The TC58DVG14B1TG00 employs advanced NAND Flash technology to achieve high storage density and performance. It supports various operations including page read, page program, block erase, and cache operations. The device features a robust ECC engine to correct bit errors and maintain data integrity over its lifespan. The device is typically available in a TSOP package and conforms to industry-standard NAND Flash specifications.

This NAND flash memory is well-suited for applications requiring reliable, high-capacity, non-volatile storage. Its combination of performance, density, and power efficiency makes it an ideal choice for a variety of embedded systems and consumer electronics products.