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Same model may have multiple batches, images only for reference.
SSM6J401TU,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM6J401TU,LF

Part No SSM6J401TU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 2.5A UF6 / P-Channel 30 V 2.5A (Ta) 500mW (Ta) Surface Mount UF6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 73mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 730 pF @ 15 V
Power Dissipation (Max) 500mW (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Supplier Device Package UF6
Package / Case 6-SMD, Flat Leads
Base Product Number SSM6J401
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Other Names SSM6J401TU,LF(B,SSM6J401TULFCT,SSM6J401TULFDKR,SSM6J401TULFTR
Standard Package 3,000
Win Source Part Number 993713-SSM6J401TU,LF
Ultra Librarian 3D Model Ultra Librarian SSM6J401TU,LF CAD Model

Description

The Toshiba Semiconductor and Storage SSM6J401TU,LF is a P-channel MOSFET transistor with a maximum drain to source voltage of 30V and a continuous drain current of 2.5A (Ta).

  • Drain to Source Voltage (Max): 30V
  • Continuous Drain Current: 2.5A (Ta)
  • Rds On (Max): 73mOhm @ 2A, 10V
  • Gate Charge: 16 nC @ 10 V
  • Temperature Range: 150°C
  • Packaging: tape and reel
  • Standard Package: 3000 units
  • HTSUS: 8541.21.0095

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