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RN1104T5LFT

Part No RN1104T5LFT
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description TRANS PREBIAS NPN 50V 0.1A SSM / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SSM
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 47 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250 MHz
Power - Max 100 mW
Mounting SMD (SMT)
Package / Case SC-75, SOT-416
Supplier Device Package SSM
Base Product Number RN1104
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Other Names RN1104T5LFTCT,RN1104T5LFTDKR,RN1104(T5L,F,T),RN1104T5LFTTR,RN1104T5LFT-ND
Standard Package 3,000
Win Source Part Number 1115132-RN1104T5LFT
Ultra Librarian 3D Model Ultra Librarian RN1104T5LFT CAD Model

Description

The electronic component with Id 1011687 is a transistor from Toshiba Semiconductor and Storage.

  • Win Source Part Number: 1115132-RN1104T5LFT
  • Category: Discrete Semiconductor Products
  • Transistor Type: Bipolar (BJT) - Single, Pre-Biased
  • Standard Package: 3,000
  • Mounting: SMD (SMT)
  • Maximum Power: 100 mW
  • Maximum Voltage (Collector Emitter Breakdown): 50 V
  • Maximum Collector Current: 100 mA
  • Transistor Polarity: NPN - Pre-Biased
  • Vce Saturation: 300mV @ 250μA, 5mA
  • Maximum Collector Cutoff: 500nA
  • DC Current Gain (hFE): 80 @ 10mA, 5V
  • Frequency Transition: 250 MHz
  • Package/Case: SC-75, SOT-416
  • Supplier Device Package: SSM
  • Resistor-Base (R1): 47 kOhms
  • Resistor-Emitter Base (R2): 47 kOhms
  • HTSUS: 8541.21.0075

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