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GT50JR22(S1WLD,E,S

Part No GT50JR22(S1WLD,E,S
Manufacturer Toshiba Semiconductor and Storage
Catalog IGBTs - Single
Description 250W 50A 600V TO-3P-3 Single IGBTs RoHS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Package TO-3P-3
Td(off) 330ns
Pd - Power Dissipation 250W
Td(on) 250ns
Current - Collector(Ic) 50A
Collector-Emitter Breakdown Voltage (Vces) 600V
Input Capacitance(Cies) 2.7nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 7.5V
Vce Saturation(VCE(sat)) 2.2V@50A,15V
Collector Cut-Off Current (Ices) 1mA
Reverse Recovery Time(trr) 350ns
Ultra Librarian 3D Model Ultra Librarian GT50JR22(S1WLD,E,S CAD Model

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3098 $52.3920
95+ $1.0747 $102.0965
145+ $1.0411 $150.9595
200+ $1.0075 $201.5000
260+ $0.9739 $253.2140
345+ $0.8732 $301.2540
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Availability: 20,680 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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