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2SK879-GR(TE85L,F)

Part No 2SK879-GR(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog JFETs (Junction Field Effect)
Description JFET N-CH 0.1W USM
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Current - Drain (Idss) @ Vds (Vgs=0) 2.6mA @ 10V
Voltage - Cutoff (VGS off) @ Id 400mV @ 100nA
Max Input Capacitance 8.2pF @ 10V
Maximum Power Dissipation 100mW
Temperature Range - Operating 125°C (TJ)
Mounting SMD (SMT)
Case / Package USM
Win Source Part Number 100903-2SK879-GR(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SK879-GR(TE85L,F) CAD Model

Description

Overview

The 2SK879-GR(TE85L,F) is a versatile N-channel MOSFET designed for use in a variety of electronic projects. Featuring an advanced technological design, this MOSFET provides enhanced performance and efficiency.

Features and Benefits

  • Low capacitance for superior high-frequency operations.
  • Energy-efficient operation reducing overall power consumption.
  • Enhanced dielectric strength for safety and reliability.
  • High-speed processing to meet demanding application needs.

Applications

  • Signal processing circuits
  • High-speed switching applications
  • Power amplifier stages
  • RF amplifiers

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3519 $51.0255
350+ $0.2888 $101.0800
540+ $0.2797 $151.0380
740+ $0.2707 $200.3180
960+ $0.2617 $251.2320
1,280+ $0.2346 $300.2880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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