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2SK1827(TE85R)

Part No 2SK1827(TE85R)
Manufacturer Toshiba Semiconductor and Storage
Catalog JFETs (Junction Field Effect)
Description Trans MOSFET N-CH Si 50V 0.05A 3-Pin USM T/R
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 159160-2SK1827(TE85R)
Popularity Low
Supply and Demand Status Balance
Family Name 2SK1827
Introduction Date June 05, 1997
ECCN EAR99
Country of Origin Japan
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SK1827(TE85R) CAD Model

Description

Product Description

The 2SK1827(TE85R) is a top-tier N-channel MOSFET crafted for premium performance in high-speed and high-efficiency circuits. Highlighted by excellent thermal stability and a compact size, it is a versatile component suited for modern electronic demands.

Features and Benefits

  • Efficient Energy Management: Low RDS(on) ensures minimal power dissipation, promoting system efficiency.
  • Fast Operational Speeds: Designed for quick switching applications for improved overall performance.
  • Thermally Robust: Maintains performance integrity across varied temperature environments, for reliable deployment in diverse conditions.
  • Compact Design: Allows for easy integration into constrained spaces without sacrificing functionality.

Applications

  • Power Management Circuits
  • Automotive Electronics
  • Solar Inverters
  • Portable Device Chargers

Additional Details

The 2SK1827(TE85R) is ideal for forward-thinking electronic design, blending advanced technology with practical features to deliver a robust solution for modern challenges. Whether the focus is on reducing energy costs or enhancing device reliability, this MOSFET is an intelligent choice, thanks to its optimal combination of speed, power, and size. It meets the needs of a global market, ensuring that electronic devices are both effective and economical.

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