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BFR31LT1G

Part No BFR31LT1G
Manufacturer ON Semiconductor
Catalog JFETs (Junction Field Effect)
Description JFET N-CH SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - JFETs
Mfr ON Semiconductor
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Drain to Source Voltage (Vdss) 25 V
Current - Drain (Idss) @ Vds (Vgs=0) 1 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id 2.5 V @ 0.5 nA
Input Capacitance (Ciss) (Max) @ Vds 5pF @ 10V
Power - Max 225 mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Product Number BFR31
Standard Package 3,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 570614-BFR31LT1G
Ultra Librarian 3D Model Ultra Librarian BFR31LT1G CAD Model

Description

ON Semiconductor BFR31LT1G NPN Silicon Transistor

The BFR31LT1G is a high-performance NPN bipolar junction transistor (BJT) from ON Semiconductor, designed for use in a wide range of electronic applications. This small-signal transistor is notable for its low current and low voltage operation, making it an ideal choice for energy-sensitive designs.

Constructed with ON Semiconductor's advanced silicon technology, the BFR31LT1G offers a combination of features that enhance its performance in various circuits. It is encapsulated in a compact SOT-23 package, which is not only space-efficient but also allows for excellent power dissipation and thermal management. This makes the BFR31LT1G suitable for high-density PCB layouts where space is at a premium.

With a collector-emitter voltage (V<sub>CEO) of 25V and a collector current (I<sub>C) of 100mA, the BFR31LT1G can handle moderate voltage and current levels while maintaining low saturation voltages. This ensures efficient operation with minimal power loss, which is critical for battery-operated devices and portable applications.

The BFR31LT1G also features a high current gain bandwidth product (f<sub>T), which is beneficial for amplification purposes in RF and high-speed signal processing. Its fast switching speeds make it suitable for digital switching circuits, where rapid transitions between on and off states are required.

Applications for the BFR31LT1G are diverse, ranging from general-purpose switching and amplification to more specific uses such as driver stages in audio amplifiers, signal processing, and control systems. Its reliable performance and ON Semiconductor's commitment to quality make it a trusted component in both commercial and industrial electronic products.

In summary, the BFR31LT1G from ON Semiconductor is a versatile NPN transistor that combines low-power operation with high-speed switching capabilities. Its compact SOT-23 package and robust electrical characteristics make it an excellent choice for designers looking to optimize their circuit designs for efficiency and space-saving without compromising on performance.

For detailed specifications and application notes, designers and engineers are encouraged to consult the BFR31LT1G datasheet available on the ON Semiconductor website.

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