The 2SD1947A is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It is designed for use in high-speed switching applications and power amplifiers.

Applications

• High-speed switching circuits
• Power amplifiers
• Inverter circuits
• DC-DC converters
• Motor control circuits

Features

• High Collector Current (IC = 3A)
• Low Saturation Voltage (VCE(sat) = 0.5V max)
• High Transition Frequency (fT = 50 MHz typ.)
• Excellent hFE Linearity
• High Power Dissipation (PC = 20W)
• Pb-free plating

Benefits

• Efficient switching performance due to low saturation voltage.
• Improved amplifier performance thanks to high transition frequency and good hFE linearity.
• Suitable for high current applications due to its high collector current rating.
• Enhanced thermal performance due to the high power dissipation rating.
• Environmentally friendly due to Pb-free plating.

Technical Specifications

The 2SD1947A features a collector-emitter voltage (VCEO) of 60V, a collector-base voltage (VCBO) of 80V, and an emitter-base voltage (VEBO) of 6V. The collector current (IC) is rated at 3A, with a peak collector current (ICM) of 6A. The power dissipation (PC) is 20W when mounted on a specified heatsink. The operating junction temperature (Tj) and storage temperature range (Tstg) are both -55 to 150°C. The typical DC current gain (hFE) ranges from 100 to 300 at a collector current of 0.5A. The saturation voltage is typically 0.3V at IC = 1A and IB = 0.1A. The transition frequency is typically 50 MHz.

This transistor is commonly used in applications where efficient and reliable switching or amplification is required, making it a versatile component for various electronic designs.