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2SC1166Y

Part No 2SC1166Y
Manufacturer Toshiba Semiconductor and Storage
Catalog Custom Parts (0 - A)
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1190151-2SC1166Y
Categories Custom Parts
Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SC1166Y CAD Model

Description

The 2SC1166Y is an NPN Epitaxial Planar Transistor manufactured by Toshiba Semiconductor and Storage. It is designed for high-frequency amplification and switching applications. This transistor is commonly used in RF amplifiers, oscillators, and high-speed switching circuits.

Applications

  • RF Amplifiers: Used in pre-amplifiers and driver stages for RF signals.
  • Oscillators: Employed in oscillator circuits for generating high-frequency signals.
  • High-Speed Switching: Found in switching circuits for fast signal control.
  • Mixers: Utilized in mixer circuits for frequency conversion.
  • Video Amplifiers: Used to amplify video signals in display systems.

Features

  • NPN Polarity: Offers complementary functionality to PNP transistors.
  • High Transition Frequency (fT): Suitable for high-frequency applications.
  • Low Noise Figure: Minimizes noise in amplifier circuits.
  • High Collector Current: Capable of handling relatively large collector currents.
  • Low Collector-Base Capacitance: Reduces signal distortion at high frequencies.

Benefits

  • High-Frequency Performance: Excellent performance in RF and high-speed circuits.
  • Low Noise Amplification: Minimizes noise in sensitive amplifier applications.
  • Efficient Switching: Fast switching speeds enable efficient signal control.
  • Versatile Application: Suitable for a wide range of high-frequency tasks.
  • Reliable Operation: Provides stable and dependable performance.

Additional Details

The 2SC1166Y is typically packaged in a small signal transistor package, such as a TO-92 or SOT-23. The 'Y' suffix often indicates a specific gain grouping or characteristic. The transition frequency (fT) is a key parameter for high-frequency transistors, indicating the frequency at which the current gain drops to unity. The low collector-base capacitance helps to minimize feedback and maintain stability in high-frequency circuits.

For detailed specifications, such as the transition frequency, noise figure, collector current rating, and collector-base capacitance, consult the official Toshiba datasheet for the 2SC1166Y. The datasheet provides comprehensive information on the transistor's electrical characteristics, performance curves, and application notes.

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