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CSD88539NDT

Part No CSD88539NDT
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 15A 8SOIC / Mosfet Array 2 N-Channel (Dual) 60V 15A 2.1W Surface Mount 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Texas Instruments
Series NexFET™
Package Tape & Reel
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 15A
Rds On (Max) @ Id, Vgs 28mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 741pF @ 30V
Power - Max 2.1W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number CSD88539
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 296-37796-2,296-37796-1,296-37796-6
Standard Package 250
Win Source Part Number 1006355-CSD88539NDT
Ultra Librarian 3D Model Ultra Librarian CSD88539NDT CAD Model

Description

Introducing the CSD88539NDT NexFET™ Power Block from Texas Instruments

The CSD88539NDT is a state-of-the-art NexFET™ power block designed and manufactured by Texas Instruments (TI), a global semiconductor company that designs and manufactures analog ICs and embedded processors. This highly efficient, dual N-channel device is an exemplary solution for power management applications.

Key Features:

  • Low On-Resistance: The CSD88539NDT boasts an exceptionally low on-resistance (RDS(on)), which results in minimal conduction losses and enhances overall efficiency.
  • High-Density Power: With its compact footprint, this power block is optimized for space-constrained applications, delivering high-density power without compromising on performance.
  • Advanced Packaging: Utilizing TI's state-of-the-art packaging technology, the device ensures excellent thermal performance and a reduced inductance, which is critical for fast-switching applications.
  • Integrated Dual MOSFETs: The integration of two MOSFETs in a single package simplifies design and reduces board space, making it ideal for synchronous buck applications.

Applications:

The CSD88539NDT is versatile and can be used in a variety of applications, including:

  • DC/DC conversion in computing and servers
  • Telecommunication power systems
  • Power supplies for CPUs and GPUs
  • Point-of-Load (POL) modules
  • High-density power modules

Technical Specifications:

  • Continuous Drain Current (ID): 40 A
  • Pulse Drain Current (IDM): 160 A
  • Power Stage VDS: 25 V
  • Operating Temperature Range: -55°C to 150°C

Quality and Reliability:

TI is committed to delivering high-quality products. The CSD88539NDT is rigorously tested to meet TI's stringent quality standards, ensuring reliability and performance in demanding environments.

Design Support:

To aid in the design process, Texas Instruments provides comprehensive technical documentation, including datasheets, application notes, and design tools. Customers can also access TI's expert support team for any technical assistance required.

With its robust feature set and TI's renowned support, the CSD88539NDT NexFET™ Power Block is an excellent choice for designers looking to improve power efficiency and density in their next-generation electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.3717 $50.1795
290+ $0.3482 $100.9780
450+ $0.3365 $151.4250
640+ $0.3129 $200.2560
835+ $0.3012 $251.5020
1,040+ $0.2894 $300.9760
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 40,570 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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