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CSD13302W

Part No CSD13302W
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 12V 1.6A 4DSBGA  /  N-Channel 12 V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA (1x1)
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Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Texas Instruments
Series NexFET™
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 17.1mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.8 nC @ 4.5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 862 pF @ 6 V
Power Dissipation (Max) 1.8W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 4-DSBGA (1x1)
Package / Case 4-UFBGA, DSBGA
Base Product Number CSD13302
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names CSD13302W-ND,2156-CSD13302W,TEXTISCSD13302W,296-48118-6,296-48118-1,296-48118-2
Standard Package 3,000
Win Source Part Number 1053422-CSD13302W
Ultra Librarian 3D Model Ultra Librarian CSD13302W CAD Model

Description

The CSD13302W is a state-of-the-art power MOSFET from Texas Instruments, designed to deliver high efficiency and performance for a wide range of applications. This N-channel NexFET™ power MOSFET is optimized for synchronous buck applications, offering a compact and energy-efficient solution for DC-DC conversion.

Key Features

  • Low On-Resistance: The CSD13302W boasts an ultra-low on-resistance (R<sub>DS(on)) of just 8.7 mΩ at V<sub>GS = 10V, which minimizes conduction losses and enhances overall efficiency.
  • High Continuous Drain Current: With a high continuous drain current (I<sub>D) of 25 A, this MOSFET can handle significant power without overheating, making it suitable for demanding applications.
  • Advanced Thermal Performance: The device's SON 3.3mm x 3.3mm package with an integrated thermal pad ensures excellent thermal dissipation, contributing to its robustness and reliability.
  • Fast Switching Speed: Fast switching capabilities reduce switching losses and improve the MOSFET's performance in high-frequency power supplies.
  • Optimized Gate Charge: The CSD13302W features a low gate charge (Q<sub>g) that enables efficient switching and reduces the power required to drive the MOSFET.

Applications

The CSD13302W is ideal for a variety of applications, including:

  • Point of Load (POL) supplies
  • Server and telecom power supplies
  • Synchronous buck converters
  • DC-DC modules
  • Battery management systems
  • Load switches

Quality and Reliability

Texas Instruments is committed to delivering high-quality and reliable products. The CSD13302W is no exception, as it is manufactured with the highest industry standards and subjected to rigorous testing to ensure performance and durability in various conditions.

Support and Resources

For designers and engineers, Texas Instruments provides extensive support and resources, including datasheets, design tools, and technical documentation to facilitate the integration of the CSD13302W into their projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
340+ $0.1474 $50.1160
830+ $0.1210 $100.4300
1,280+ $0.1172 $150.0160
1,765+ $0.1134 $200.1510
2,285+ $0.1096 $250.4360
3,055+ $0.0983 $300.3065
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,000 pieces
MOQ: 340 pcs
Order Increment : 1 pcs
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