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TSM9433CSRL

Part No TSM9433CSRL
Manufacturer Taiwan Semiconductor
Catalog OEM Parts (T - Z)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOP
Continuous Drain Current (ID) 5.4 A
Gate to Source Voltage (Vgs) 12 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 1
Number of Pins 8
Packaging Tape and Reel
Power Dissipation 2.5 W
RoHS Compliant
Win Source Part Number 965501-TSM9433CSRL
Categories OEM Parts(T-Z)
Manufacturer Taiwan Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TSM9433CSRL CAD Model

Description

The TSM9433CSRL is an N-Channel Enhancement Mode MOSFET from Taiwan Semiconductor, designed for low voltage, high-speed switching applications. Featuring a low gate charge and low on-resistance, this MOSFET is optimized for efficiency in DC-DC converters and power management circuits. Its compact package makes it ideal for portable devices where board space is limited.

Applications

  • DC-DC Converters
  • Load Switching
  • Power Management in Portable Devices
  • Battery Protection Circuits
  • LED Backlighting

Features

  • Low On-Resistance (RDS(on)) for minimal power loss
  • Low Gate Charge (Qg) for fast switching speeds
  • Small Footprint Surface Mount Package
  • Logic Level Gate Drive
  • Lead-Free and RoHS Compliant

Benefits

  • High efficiency in power conversion applications
  • Reduced power dissipation and heat generation
  • Space saving design for compact devices
  • Directly compatible with microcontroller outputs
  • Environmentally friendly

Additional Details

The TSM9433CSRL is typically supplied in a small outline transistor (SOT) package, which allows for easy surface mounting and efficient heat dissipation. Its electrical specifications include a drain-source voltage (VDS) suited for low voltage operation, a continuous drain current (ID) capable of handling typical load requirements, and a gate threshold voltage (VGS(th)) designed for logic level control. Taiwan Semiconductor provides detailed datasheets that include comprehensive electrical characteristics, thermal performance data, and application notes to assist designers in optimizing the MOSFET's performance in their designs. The low RDS(on) value minimizes conduction losses, contributing to higher efficiency and cooler operation. The low gate charge enables fast switching speeds, reducing switching losses at higher frequencies. The device's small package and lead-free construction make it suitable for modern electronic devices that require compact, environmentally friendly components. The logic-level gate drive simplifies the design process by allowing direct control from microcontroller outputs without the need for additional driver circuitry.

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