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TSM250N02DCQ

Name: TSM250N02DCQ
Brand: Taiwan Semiconductor
SKU: 759233
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	TSM250N02DCQ
Manufacturer	Taiwan Semiconductor
Catalog	FETs - Arrays
Description	20V, 5.8A, DUAL N-CHANNEL POWER
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr	Taiwan Semiconductor
Package	Tape & Reel
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel
FET Feature	Standard
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	5.8A (Tc)
Rds On (Max) @ Id, Vgs	25mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	0.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	775pF @ 10V
Power - Max	620mW (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-VDFN Exposed Pad
Supplier Device Package	6-TDFN (2x2)
Base Product Number	TSM250
Standard Package	12,000 pcs
MSL Level	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	759233-TSM250N02DCQ
Ultra Librarian 3D Model	Ultra Librarian TSM250N02DCQ CAD Model

Alternative Products

Description

The 759233-TSM250N02DCQ is a MOSFET array in the 6-VDFN Exposed Pad package.

Drain-to-Source Voltage (Vdss): 20 V
Continuous Drain Current (Id): 5.8 A @ case temperature (Tc) of 25°C
Maximum On-Resistance (Rds On): 25 mOhm @ drain current (Id) of 4 A and a gate-source voltage (Vgs) of 4.5 V
Gate Threshold Voltage (Vgs(th)): 0.8 V @ drain current (Id) of 250 μA
Maximum Power Rating: 620 mW @ case temperature (Tc)
Mounting: Surface Mount
Temperature Range: -55°C to 150°C
Status: Active product from Taiwan Semiconductor

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