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Same model may have multiple batches, images only for reference.
TSM250N02DCQ Taiwan Semiconductor
Same model may have multiple batches, images only for reference.

TSM250N02DCQ

Part No TSM250N02DCQ
Manufacturer Taiwan Semiconductor
Catalog FETs - Arrays
Description 20V, 5.8A, DUAL N-CHANNEL POWER
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Taiwan Semiconductor
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 5.8A (Tc)
Rds On (Max) @ Id, Vgs 25mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 0.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 775pF @ 10V
Power - Max 620mW (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-VDFN Exposed Pad
Supplier Device Package 6-TDFN (2x2)
Base Product Number TSM250
Standard Package 12,000 pcs
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 759233-TSM250N02DCQ
Ultra Librarian 3D Model Ultra Librarian TSM250N02DCQ CAD Model

Description

The 759233-TSM250N02DCQ is a MOSFET array in the 6-VDFN Exposed Pad package.

  • Drain-to-Source Voltage (Vdss): 20 V
  • Continuous Drain Current (Id): 5.8 A @ case temperature (Tc) of 25°C
  • Maximum On-Resistance (Rds On): 25 mOhm @ drain current (Id) of 4 A and a gate-source voltage (Vgs) of 4.5 V
  • Gate Threshold Voltage (Vgs(th)): 0.8 V @ drain current (Id) of 250 μA
  • Maximum Power Rating: 620 mW @ case temperature (Tc)
  • Mounting: Surface Mount
  • Temperature Range: -55°C to 150°C
  • Status: Active product from Taiwan Semiconductor

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