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TSM230N06CPROG

Part No TSM230N06CPROG
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 60V N-Channel Power MOSFET
Sample
Rohs State rohs
ECAD Module
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Categories Uncategorized
Manufacturer Taiwan Semiconductor
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 841101-TSM230N06CPROG
Ultra Librarian 3D Model Ultra Librarian TSM230N06CPROG CAD Model

Description

The TSM230N06CPROG is an N-Channel enhancement mode power MOSFET from Taiwan Semiconductor. It is designed for use in a wide range of applications, leveraging its low on-resistance and fast switching speed. This MOSFET is particularly well-suited for power management and load switching applications.

Applications:

  • DC-DC converters
  • Load switching
  • Power management in portable devices
  • Motor control circuits
  • LED lighting applications

Features:

  • N-Channel enhancement mode
  • Low on-resistance (RDS(on)) to minimize power loss
  • Fast switching speed for efficient operation
  • Logic level gate drive
  • RoHS compliant
  • Halogen-free

Benefits:

  • Improved energy efficiency due to low RDS(on)
  • Reduced power dissipation, leading to cooler operation
  • Simplified gate drive requirements
  • High system reliability
  • Environmentally friendly due to RoHS compliance and being Halogen-free

Additional Details:

The TSM230N06CPROG boasts a low gate threshold voltage, which enables it to be driven directly by logic-level signals. Its low on-resistance contributes to reduced power loss and improved efficiency in power switching applications. The device is typically available in a surface-mount package, facilitating automated assembly and compact designs. It is designed to withstand the thermal stresses associated with power switching, ensuring reliable operation in demanding environments. The specific package is likely an SOT-23 or similar small outline package. Key electrical specifications include drain-source voltage (VDS), gate-source voltage (VGS), continuous drain current (ID), and pulsed drain current (IDM). Always refer to the official datasheet from Taiwan Semiconductor for the most accurate and up-to-date specifications. The datasheet will include detailed information on thermal resistance, gate charge, and diode characteristics. This MOSFET is often used in battery-powered devices where efficiency is critical.

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