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STY34NB50F

Part No STY34NB50F
Manufacturer STMicroelectronics
Catalog Electronic Wholesale
Description N - CHANNEL 500V - 0.11ohm - 34 A - Max247 PowerMESH MOSFET
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Manufacturer STMicroelectronics
Win Source Part Number 1262425-STY34NB50F
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STY34NB50F CAD Model

Description

STY34NB50F - N-Channel 500V - 0.095ohm - 34A - TO-220/FP/D2PAK - STripFET™ II Power MOSFET

The STY34NB50F is a high-performance N-Channel Power MOSFET produced by the renowned semiconductor manufacturer STMicroelectronics. This device is part of the STripFET™ II series, which is known for its low on-state resistance and high switching performance. The STY34NB50F is designed to meet the demanding requirements of a wide range of electronic applications, including switch-mode power supplies, DC-AC converters, motor control, and power management systems.

With a drain-source voltage (VDS) of 500V, the STY34NB50F is capable of handling high voltage applications with ease. The device also features a low on-state resistance (RDS(on)) of 0.095 ohms, which results in reduced conduction losses and improved overall efficiency. The MOSFET can deliver a continuous drain current (ID) of 34A, making it suitable for high current scenarios.

Available in the versatile TO-220, TO-220FP, and D2PAK packages, the STY34NB50F offers flexibility for various mounting and heat dissipation requirements. The TO-220 package is widely used and easy to handle, the TO-220FP offers an isolated mounting tab, and the D2PAK is suitable for applications where space is at a premium.

Key features of the STY34NB50F include:

  • Low threshold drive
  • Exceptional dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized for reduced switching losses
  • High current capability and robustness

The STY34NB50F also incorporates advanced technology that ensures reliable operation under harsh conditions. Its enhanced immunity to the effects of fast transients (dv/dt) ensures stability and longevity in applications that are subject to high voltage spikes. Moreover, the MOSFET is 100% avalanche tested, which guarantees ruggedness and reliability in applications that may experience unexpected overvoltage conditions.

STMicroelectronics' commitment to quality and performance is evident in the STY34NB50F Power MOSFET. It is an excellent choice for designers looking for a robust, efficient, and versatile component that can drive their high-voltage, high-current applications with confidence.

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