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STW68N65DM6-4AG

Part No STW68N65DM6-4AG
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 72A TO247-4 / N-Channel 650 V 72A (Tc) 480W (Tc) Through Hole TO-247-4
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series Automotive, AEC-Q101, MDmesh™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 72A (Tc)
Rds On (Max) @ Id, Vgs 39mOhm @ 36A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 118 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 5900 pF @ 100 V
Power Dissipation (Max) 480W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4
Package / Case TO-247-4
Base Product Number STW68
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-STW68N65DM6-4AG
Standard Package 30
Win Source Part Number 1097347-STW68N65DM6-4AG
Ultra Librarian 3D Model Ultra Librarian STW68N65DM6-4AG CAD Model

Description

The STW68N65DM6-4AG is a state-of-the-art power MOSFET brought to you by STMicroelectronics, a leader in semiconductor solutions. This device is designed to meet the demands of high efficiency and energy-saving applications across various sectors, including computing, consumer electronics, industrial, and automotive systems.

With a 650V drain-source breakdown voltage, the STW68N65DM6-4AG is well-suited for high voltage applications. Its robust structure ensures reliability and longevity even under challenging conditions. The device boasts an ultra-low on-resistance (RDS(on)) of just 0.032 ohms, which translates to reduced conduction losses and improved overall performance.

One of the key features of the STW68N65DM6-4AG is its MDmesh™ DM6 technology. This advanced technology combines a super-junction structure with a proprietary diffusion process, enabling the MOSFET to achieve excellent RDS(on) area characteristics. This results in a lower gate charge (Qg), reduced capacitances, and faster switching speeds, making it ideal for high-frequency applications.

The MOSFET is housed in a HiP247™ package, which provides enhanced thermal performance and simplifies the PCB layout. This package is designed to handle high current and power dissipation with ease, ensuring the MOSFET operates effectively even under high stress conditions.

Furthermore, the STW68N65DM6-4AG is characterized by a very low gate charge and low effective output capacitance (Coss), which are crucial for improving the efficiency of resonant and hard-switching topologies. This makes the MOSFET an excellent choice for applications such as solar inverters, welding equipment, and high-performance power supplies.

In addition to its electrical performance, the STW68N65DM6-4AG is also environmentally friendly. It complies with the European Union's stringent RoHS and Halogen-free directives, making it a sustainable choice for eco-conscious manufacturers and consumers.

Overall, the STW68N65DM6-4AG from STMicroelectronics is a powerful and reliable component that offers an optimal balance between efficiency and performance, making it an indispensable part of modern electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $13.1505 $52.6020
9+ $12.3021 $110.7189
13+ $11.8779 $154.4127
19+ $11.0295 $209.5605
24+ $10.6053 $254.5272
30+ $10.1811 $305.4330
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 330 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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