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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 650V
Id - Continuous Drain Current 30A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 95mOhm at 15A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 71nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 3000pF at 100V
Power Dissipation (Maximum) 190W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package TO-247
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1262362-STW38N65M5
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STW38N65M5 CAD Model

Description

STW38N65M5 - High Performance Power MOSFET by STMicroelectronics

The STW38N65M5 is a state-of-the-art N-channel Power MOSFET designed and manufactured by STMicroelectronics, a leader in the semiconductor industry. This MOSFET is part of STMicroelectronics' MDmesh™ M5 series, which is renowned for its excellent energy efficiency and high power density, making it an ideal choice for a wide range of high-performance applications.

With a drain-source voltage (V<sub>DS) of 650V, this MOSFET is well-suited for high voltage applications, ensuring robust performance even under strenuous conditions. The STW38N65M5 boasts a low on-resistance (R<sub>DS(on)) of only 0.036 ohms, which translates to reduced conduction losses and improved overall efficiency in your circuit designs.

The device features a maximum continuous drain current (I<sub>D) of 31A at 25°C, allowing it to handle significant power without overheating. The power MOSFET also has a high threshold voltage of 4.5V, which ensures that the device remains off under small voltage fluctuations, providing a stable operation.

One of the key advantages of the STW38N65M5 is its fast switching speed, thanks to its low gate charge (Q<sub>g). This makes it particularly useful in applications such as switch-mode power supplies, lighting, welding, and solar inverters, where efficiency and speed are critical. Additionally, the MOSFET's low gate drive voltage makes it compatible with a broader range of drive circuits, offering greater flexibility in design.

The robustness of this MOSFET is further enhanced by its 100% avalanche tested design, ensuring reliability and longevity even under tough conditions. The STW38N65M5 is also designed with a high dv/dt capability, making it resistant to voltage transients and providing additional protection for your electronic devices.

Available in a TO-247 long leads package, the STW38N65M5 ensures excellent heat dissipation and ease of mounting on heat sinks, which is vital for maintaining thermal stability and extending the lifespan of your product. Whether you're designing power conversion systems or looking for a reliable switch for your high-voltage applications, the STW38N65M5 from STMicroelectronics is a choice that promises performance, efficiency, and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.9022 $63.2176
18+ $6.4838 $116.7084
27+ $6.2812 $169.5924
37+ $6.0786 $224.9082
48+ $5.8760 $282.0480
64+ $5.2681 $337.1584
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 1,350 pieces
MOQ: 8 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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