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STW33N60DM2

Part No STW33N60DM2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Extremely high dv/dt ruggedness
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh DM2
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 43nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1870pF @ 100V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 190W (Tc)
Rds On (Maximum) @ Id, Vgs 130 mOhm @ 12A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247
Package TO-247-3
Win Source Part Number 1262359-STW33N60DM2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STW33N60DM2
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian STW33N60DM2 CAD Model

Description

The STW33N60DM2 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, designed to meet the demands of advanced electronic power conversion systems. This state-of-the-art power MOSFET is part of ST's MDmesh™ DM2 series, which is renowned for its excellent energy efficiency and reliability.

Key Features

  • Voltage Rating: The device boasts a robust 600 V drain-source breakdown voltage, making it suitable for high-voltage applications.
  • Low On-Resistance: With an on-resistance (RDS(on)) of just 0.165 Ω, the STW33N60DM2 ensures minimal conduction losses, contributing to overall system efficiency.
  • High Current Capability: This MOSFET can handle a continuous drain current (ID) of up to 33 A, providing ample current for a wide range of applications.
  • Fast Switching: The device is designed for fast switching, reducing switching losses and improving performance in high-frequency circuits.
  • Enhanced dv/dt Capability: The enhanced dv/dt rating ensures reliable operation even under harsh switching conditions and minimizes the risk of destructive voltage transients.
  • Low Gate Charge: A low total gate charge (Qg) helps to reduce driving power requirements and enhances the efficiency of the power conversion system.

Applications

The STW33N60DM2 is ideal for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • Power Factor Correction (PFC) circuits
  • High-frequency converters and inverters
  • LED lighting solutions
  • Welding equipment

Advantages

The STW33N60DM2 is designed to offer superior performance in power conversion applications. Its low on-resistance and high current handling capabilities ensure minimal power loss and heat generation. Furthermore, the fast switching characteristics and robust voltage rating make it a versatile choice for designers looking to optimize their power systems for both efficiency and reliability.

With its combination of features, the STW33N60DM2 from STMicroelectronics is an excellent choice for engineers and designers seeking a high-performance solution for their power management challenges.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.5651 $52.5208
19+ $5.3867 $102.3473
29+ $5.2184 $151.3336
40+ $5.0500 $202.0000
52+ $4.8817 $253.8484
69+ $4.3767 $301.9923
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 83,084 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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