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STW28N60M2

Part No STW28N60M2
Manufacturer STMicroelectronics
Catalog FETs - Single
Description Extremely low gate charge | MOSFET N-CH 600V 24A TO-247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 24A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 150mOhm at 12A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 37nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 1370pF at 100V
Power Dissipation (Maximum) 170W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1262357-STW28N60M2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STW28N60M2 CAD Model

Description

STW28N60M2 - STMicroelectronics Power MOSFET

The STW28N60M2 is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader known for its innovative and reliable products. This particular MOSFET is part of the MDmesh™ M2 series, which is celebrated for its excellent energy efficiency and high power density, making it an ideal choice for a wide range of applications, including switch-mode power supplies, lighting, welding, and high-performance drives.

Key Features

  • High Voltage Capability: The STW28N60M2 is capable of handling high voltages up to 600V, which is suitable for various industrial and consumer applications that require robust power handling capabilities.
  • Low On-Resistance (R<sub>DS(on)): With its low on-state resistance, this MOSFET ensures minimal power loss and heat generation, leading to improved overall efficiency and reliability.
  • Fast Switching Speed: The device offers fast switching performance, which is crucial for reducing switching losses and improving the efficiency of power conversion systems.
  • Reduced Gate Charge (Q<sub>g): A lower gate charge facilitates faster switching speeds and reduces the energy required to turn the MOSFET on and off, which is beneficial for applications that cycle frequently.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring that the MOSFET can handle sudden energy spikes without failure.

Applications

The versatility of the STW28N60M2 makes it suitable for a broad spectrum of applications, including:

  • Power supply units for servers, telecom, and industrial systems
  • LED lighting solutions
  • Solar inverters and photovoltaic systems
  • Electric vehicle charging stations
  • High-performance computing and data center power solutions

Environmental and Quality Certifications

STMicroelectronics is committed to environmental sustainability and quality. The STW28N60M2 is designed with these principles in mind, ensuring compliance with international standards and certifications such as RoHS and REACH.

With its robust design, high efficiency, and versatility, the STW28N60M2 from STMicroelectronics represents a reliable and high-performance solution for designers and engineers looking to enhance their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.8742 $56.2260
70+ $1.5379 $107.6530
105+ $1.4898 $156.4290
140+ $1.4417 $201.8380
180+ $1.3937 $250.8660
245+ $1.2495 $306.1275
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 80 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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