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STS6P3LLH6

Part No STS6P3LLH6
Manufacturer STMicroelectronics
Catalog FETs - Single
Description High avalanche ruggedness | MOSFET P-CH 30V 6A 8SOIC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 6A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 30mOhm at 3A, 10V
Gate Source Voltage(th) (Maximum) at Id 1V at 250μA (Minimum)
Gate Charge (Qg) (Maximum) at Vgs 12nC at 4.5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1450pF at 24V
Power Dissipation (Maximum) 2.7W
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package 8-SO
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1262049-STS6P3LLH6
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STS6P3LLH6 CAD Model

Description

Introducing the STS6P3LLH6 Power MOSFET from STMicroelectronics

The STS6P3LLH6 is a state-of-the-art Power MOSFET device designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This product is part of the STripFET™ VI DeepGATE™ technology, which is renowned for its superior performance in power management applications. The STS6P3LLH6 is specifically engineered to achieve low on-state resistance and to provide high switching performance.

This MOSFET is housed in a compact PowerFLAT™ 5x6 package, which is not only space-efficient but also boasts an excellent thermal performance. The package is designed to meet the requirements of a wide range of applications, from intricate power supplies to robust automotive systems.

The STS6P3LLH6 offers a drain-source voltage (V<sub>DS) of -30 V, which is ideal for applications requiring a negative voltage rail. With a continuous drain current (I<sub>D) of -40 A at 25°C, this device is capable of handling significant power levels, making it suitable for high-power density applications. Its low threshold voltage ensures that the device can be driven at lower gate voltages, which is beneficial for power-sensitive designs.

The low on-state resistance (R<sub>DS(on)) of this MOSFET, which is typically just 6.3 mΩ at a gate-source voltage (V<sub>GS) of 10 V, contributes to its high efficiency by minimizing conduction losses. This characteristic is particularly important in applications where energy conservation is critical, such as battery-powered devices and energy storage systems.

Additionally, the STS6P3LLH6 features robust avalanche ruggedness, ensuring it can withstand tough conditions and providing designers with a reliable component for their power circuits. Its fast switching speed is an asset for high-frequency operations, which is a common requirement in modern power conversion systems.

Whether you are designing a power supply for consumer electronics, an energy management system, or a motor control circuit, the STS6P3LLH6 from STMicroelectronics offers the performance, efficiency, and reliability that your project demands.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9382 $51.6010
130+ $0.7699 $100.0870
205+ $0.7458 $152.8890
280+ $0.7217 $202.0760
360+ $0.6977 $251.1720
480+ $0.6255 $300.2400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,922 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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