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Manufacturer STMicroelectronics
Win Source Part Number 1261994-STS10NF30L
Manufacturer Homepage www.st.com
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Ultra Librarian 3D Model Ultra Librarian STS10NF30L CAD Model

Description

The STS10NF30L is a high-performance, low-voltage N-channel Power MOSFET developed by STMicroelectronics, a global semiconductor leader known for its innovative and advanced technology. Designed to target a wide range of applications, this MOSFET is particularly suitable for high-efficiency power management tasks.

Key Features

  • Low Threshold Drive: The device features a low gate threshold voltage, making it suitable for low-voltage drive applications and ensuring ease of drive with low on-state resistance (R<sub>DS(on)).
  • High Switching Speed: With its fast switching capabilities, the STS10NF30L minimizes switching losses, which is critical for high-frequency power conversion systems.
  • Improved Power Density: The compact and efficient design of this MOSFET enables designers to improve power density in their applications, allowing for smaller and more energy-efficient designs.
  • Enhanced Thermal Performance: The STS10NF30L comes with excellent thermal characteristics, providing reliable operation even at high temperatures.
  • Low Gate Charge: A low gate charge (Q<sub>g) reduces the power dissipation during switching, contributing to the overall energy efficiency of the system.

Applications

The STS10NF30L Power MOSFET is versatile and can be used in a variety of electronic circuits and systems, including:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Control Circuits
  • Power Management Functions
  • Load Switching
  • Automotive Applications

Product Specifications

Parameter Value Drain-source Voltage (V<sub>DS) 30V Continuous Drain Current (I<sub>D) 10A Power Dissipation (P<sub>D) 25W Operating Temperature Range -55°C to 150°C

With its robust design and state-of-the-art manufacturing, the STS10NF30L from STMicroelectronics is an excellent choice for designers looking to enhance the efficiency and reliability of their power management systems.

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