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STP33N65M2

Part No STP33N65M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Extremely low gate charge
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh M2
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 41.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1790pF @ 100V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 190W (Tc)
Rds On (Maximum) @ Id, Vgs 140 mOhm @ 12A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220
Package TO-220-3
Win Source Part Number 1261723-STP33N65M2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STP33N65M2
Introduction Date December 10, 2014
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2032
Ultra Librarian 3D Model Ultra Librarian STP33N65M2 CAD Model

Description

STP33N65M2 - N-channel MOSFET by STMicroelectronics

The STP33N65M2 is a high-performance N-channel MOSFET brought to you by STMicroelectronics, a global semiconductor leader known for its state-of-the-art electronic components. This power MOSFET is designed to deliver exceptional efficiency and reliability for a wide range of applications, including switch-mode power supplies (SMPS), lighting, DC-AC converters, and motor control circuits.

Key Features:

  • Advanced Technology: The STP33N65M2 is built on STMicroelectronics' advanced MDmesh™ M2 technology, which combines a vertical structure with a new proprietary diffusion process. This enables the MOSFET to achieve low on-resistance and reduced gate charge, leading to superior switching performance and improved overall efficiency.
  • High Voltage Capability: With a drain-source voltage (V<sub>DS) of up to 650V, the STP33N65M2 is well-suited for high-voltage applications, providing a robust and durable solution for circuits exposed to large voltage swings.
  • Low On-Resistance: The device features an on-resistance (R<sub>DS(on)) as low as 0.190 ohm, minimizing conduction losses and enhancing energy-saving potential in power conversion systems.
  • Reduced Switching Losses: Thanks to its fast switching speed and low gate charge (Q<sub>g), the STP33N65M2 can switch on and off rapidly, reducing energy losses during the switching process and improving the performance of power converters.
  • High Current Capability: With a continuous drain current (I<sub>D) of up to 22A, this MOSFET can handle significant currents, making it ideal for high-power applications.

Applications:

The versatility of the STP33N65M2 allows it to be used in a variety of applications, ranging from power management solutions to renewable energy systems. Its robust design and electrical characteristics make it particularly well-suited for:

  • High-efficiency switch-mode power supplies (SMPS)
  • LED lighting solutions
  • Solar inverters and photovoltaic systems
  • Uninterruptible power supplies (UPS)
  • High-performance motor drives and controllers

With its combination of high voltage capability, low on-resistance, and fast switching speeds, the STP33N65M2 from STMicroelectronics represents a reliable and efficient choice for designers looking to optimize their power management and conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.6922 $58.4610
11+ $9.5936 $105.5296
17+ $9.2938 $157.9946
23+ $8.9940 $206.8620
29+ $8.6942 $252.1318
39+ $7.7948 $303.9972
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Availability: 180 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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