The STPSC12065D is a cutting-edge Silicon Carbide Power Schottky Diode designed and manufactured by STMicroelectronics, a global semiconductor leader. This diode is part of ST's SiC diode portfolio that features no reverse recovery charge, high surge capability, and a very low forward voltage drop. These characteristics make the STPSC12065D an ideal choice for a wide range of applications where efficiency and reliability are paramount.

Key Features

• No Reverse Recovery Charge: The diode has zero reverse recovery charge, which helps to reduce switching losses and enhances system efficiency, especially in high-frequency applications.
• High Surge Capability: Designed to withstand high surge currents, making it suitable for applications that may experience unexpected overcurrent conditions.
• Low Forward Voltage Drop: The low forward voltage drop minimizes power losses during conduction, leading to more efficient power conversion.
• High-Temperature Operation: Capable of operating at high junction temperatures, which allows for reduced cooling requirements and increased system density.
• Robust Package: Housed in a TO-220AC package, the STPSC12065D offers a robust and reliable solution for power electronics applications.

Applications

The STPSC12065D is suitable for a variety of applications, including but not limited to:

• Switch Mode Power Supplies (SMPS)
• Power Factor Correction (PFC) circuits
• High-frequency converters and inverters
• Energy storage systems
• Electric vehicle (EV) charging stations
• Photovoltaic (solar) inverters

Technical Specifications

Parameter Value Repetitive Peak Reverse Voltage (V<sub>RRM) 650 V Average Forward Current (I<sub>F(AV)) 12 A Non-Repetitive Peak Forward Surge Current (I<sub>FSM) 100 A Operating Junction Temperature (T<sub>j) -40°C to +175°C

With its exceptional performance and reliability, the STPSC12065D is a top choice for engineers and designers looking to leverage the advantages of Silicon Carbide technology in their power electronics designs.