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STP8N80K5

Part No STP8N80K5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description N-channel 800 V, 0.8  typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in TO-220 and IPAK packages
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series SuperMESH5
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 800V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs 16.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 450pF @ 100V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 110W (Tc)
Rds On (Maximum) @ Id, Vgs 950 mOhm @ 3A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220
Package TO-220-3
Win Source Part Number 1261798-STP8N80K5
Manufacturer Homepage www.st.com
Family Name STP8N80K5
ECCN EAR99
Country of Origin Morocco
Halogen Free Compliant
Estimated EOL Date 2028
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STP8N80K5 CAD Model

Description

The STP8N80K5 is a high-performance, N-channel Power MOSFET designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is part of STMicroelectronics' MDmesh™ K5 series, which is known for its excellent efficiency and performance in high-voltage applications.

Key Features

  • Voltage Rating: The STP8N80K5 has a drain-source voltage (V<sub>DS) rating of 800V, making it suitable for handling high-voltage tasks in power conversion circuits.
  • Current Capacity: It can sustain a continuous drain current (I<sub>D) of up to 8A, allowing it to drive significant loads.
  • Low On-Resistance: With an on-resistance (R<sub>DS(on)) as low as 0.85 ohms, this MOSFET ensures minimal power loss and improved efficiency in applications.
  • Fast Switching: The device features fast switching capabilities, which is critical for reducing switching losses in power supply applications.
  • Reduced Gate Charge: A low gate charge (Q<sub>g) enhances the STP8N80K5's performance by allowing for faster switching speeds and reduced power consumption during operation.

Applications

The STP8N80K5 is designed for a wide range of applications, particularly those requiring high efficiency and power density. Its typical uses include:

  • Switching power supplies
  • LED lighting applications
  • High-efficiency DC-DC converters
  • Motor control systems
  • Power management solutions

Advanced Technology

This MOSFET leverages STMicroelectronics' innovative MDmesh™ K5 technology, which combines the benefits of reduced conduction losses with zero recovery charge. This technology is especially advantageous in resonant and soft-switching topologies. The STP8N80K5 also features a robust and rugged design, which ensures reliability and longevity in harsh environments.

Package and Availability

The STP8N80K5 is available in a TO-220 package, which is widely used and easy to integrate into various circuit designs. Its lead-free and RoHS-compliant construction aligns with environmental standards and global regulations for electronic components.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6609 $58.1315
85+ $1.3628 $115.8380
135+ $1.3203 $178.2405
185+ $1.2777 $236.3745
235+ $1.2351 $290.2485
315+ $1.1073 $348.7995
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,010 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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