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STP33N60DM2

Part No STP33N60DM2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Extremely high dv/dt ruggedness
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh DM2
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 43nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1870pF @ 100V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 190W (Tc)
Rds On (Maximum) @ Id, Vgs 130 mOhm @ 12A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220
Package TO-220-3
Win Source Part Number 1261722-STP33N60DM2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STP33N60DM2
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian STP33N60DM2 CAD Model

Description

STP33N60DM2 - High Performance Power MOSFET by STMicroelectronics

The STP33N60DM2 is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This device is part of STMicroelectronics' MDmesh™ DM2 series, which is renowned for its excellent energy efficiency and performance in a wide range of applications.

Key Features:

  • Advanced Technology: The STP33N60DM2 incorporates the second generation of MDmesh™ technology, which combines a vertical structure with the company's proprietary strip layout. This design provides an optimal balance between on-resistance and gate charge, enhancing the overall efficiency of the device.
  • High Breakdown Voltage: With a high drain-source breakdown voltage of 600V, this MOSFET is suitable for high voltage applications, ensuring reliability and robustness in demanding environments.
  • Low On-Resistance: The device features a low on-resistance (R<sub>DS(on)) of just 0.190 ohms. This characteristic minimizes conduction losses and improves overall efficiency, making it ideal for high-performance power conversion systems.
  • Reduced Gate Charge: A low gate charge (Q<sub>g) reduces switching losses, which is critical for high-frequency operations. This feature allows for faster switching and better performance in applications such as switching power supplies and motor control.
  • High Current Capability: The STP33N60DM2 can handle continuous drain currents up to 33A, making it capable of powering high current applications without compromising performance.

Applications:

  • Switching power supplies
  • Motor control
  • Power inverters
  • Power factor correction (PFC) circuits
  • LED lighting

The STP33N60DM2 is not only a testament to STMicroelectronics' commitment to innovation but also an essential component for designers looking to create efficient and reliable power management systems. Its robustness, combined with high efficiency, makes it an excellent choice for both industrial and consumer applications where performance and energy savings are crucial.

With its advanced features and proven technology, the STP33N60DM2 is set to become a go-to solution for engineers seeking to optimize their power systems with cutting-edge components.

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