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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 27A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 115mOhm at 13.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 94nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 2740pF at 50V
Power Dissipation (Maximum) 190W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1261715-stp30nm50n
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian stp30nm50n CAD Model

Description

The STP30NM50N is a high-performance, N-channel Power MOSFET brought to you by STMicroelectronics, a global semiconductor leader known for its state-of-the-art electronic components. This Power MOSFET is designed to meet a wide range of applications, offering an excellent balance of power efficiency and reliability.

With a standard threshold voltage and a drain-source voltage of 500V, the STP30NM50N is capable of handling high voltage applications with ease. Its continuous drain current is rated at 30A, making it suitable for high current operations. The device operates with a low gate charge (Qg), which enhances its efficiency by reducing switching losses, making it ideal for high-frequency power switching applications.

The STP30NM50N incorporates advanced MDmesh™ technology, which combines the benefits of reduced on-resistance and fast switching speeds. This technology ensures that the MOSFET operates with high efficiency, minimizing energy wastage and improving overall performance in power conversion systems. Additionally, the device features Zener-protection that provides enhanced robustness and reliability by protecting the gate oxide layer from electrostatic discharges during handling and operation.

The MOSFET is encapsulated in a TO-220 package, which is widely used in the industry and known for its robustness and good thermal performance. The package is designed to handle high heat dissipation, ensuring the MOSFET remains operational even under high temperature conditions. This makes the STP30NM50N particularly suitable for challenging environments and applications such as switch-mode power supplies, DC-AC converters, motor drives, and other power management tasks.

In summary, the STP30NM50N from STMicroelectronics is a versatile and reliable component that offers designers a high-voltage, high-current solution for their power management needs. Its advanced features and robust package design make it a go-to choice for engineers looking to enhance the efficiency and reliability of their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.7860 $64.7160
15+ $8.8502 $132.7530
23+ $8.5736 $197.1928
32+ $8.2971 $265.5072
41+ $8.0205 $328.8405
54+ $7.1907 $388.2978
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 1,200 pieces
MOQ: 6 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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