The STP28N60M2 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, one of the leading companies in semiconductor solutions. This device is part of their MDmesh™ M2 series, which utilizes innovative technology to achieve very low on-resistance and minimal gate charge. The STP28N60M2 is designed for applications that require high efficiency and power density.

Key Features

• High Voltage Capability: With a maximum drain-source voltage (V<sub>DS) of 600V, the STP28N60M2 can handle high voltage applications, making it suitable for industrial, consumer, and lighting applications.
• Low On-Resistance: The device's low on-resistance (R<sub>DS(on)) minimizes conduction losses, thereby enhancing the overall efficiency of the system it is implemented in.
• Reduced Gate Charge (Q<sub>g): A low gate charge ensures faster switching performance, which is critical for high-frequency operations.
• 100% Avalanche Tested: This feature guarantees the MOSFET's ruggedness and reliability in real-world applications where unexpected voltage spikes may occur.

Applications

The STP28N60M2 is versatile in its applications, including but not limited to:

• Switch Mode Power Supplies (SMPS)
• High Efficiency DC-DC Converters
• Motor Control Systems
• LED Lighting Solutions
• Power Factor Correction Circuits

Technical Specifications

Parameter Value Drain-source Voltage (V<sub>DS) 600V Continuous Drain Current (I<sub>D) 23A Power Dissipation (P<sub>D) 190W Operating Temperature Range -55°C to 150°C

With its robust package design and optimized electrical characteristics, the STP28N60M2 is an excellent choice for designers looking to enhance the performance and reliability of their power management systems.